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| GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 4580 SFH 4585 Chip position 4.5 7.5 3.9 5.5 2.7 2.3 2.05 R 1.95 2.7 2.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06960 14.7 13.1 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 7.4 2.05 R 1.95 4.8 4.4 2.7 2.4 Chip position 4.5 3.9 8.0 -0.1...0.1 3.7 3.3 4.8 4.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06961 15.5 14.7 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group -0.15...0..15 1 1998-11-12 SFH 4580 SFH 4585 Wesentliche Merkmale Hergestellt im Schmelzepitaxieverfahren Fur Oberflachenmontage geeignet Gegurtet lieferbar Gehausegleich mit Fotodiode SFH 2500/ SFH 2505 q Hohe Zuverlassigkeit q Gute spektrale Anpassung an Si-Fotoempfanger Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern q Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb q q q q Features Fabricated in a liquid phase epitaxy process Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 q High reliability q Spectral match with silicon photodetectors q q q q Applications q IR remote control of hi-fi and TV-sets, video tape recorders, dimmers q Remote control for steady and varying intensity Typ Type SFH 4580 SFH 4585 Bestellnummer Ordering Code on request on request Gehause Package 5-mm-LED-Gehause (T 1 3/4), klares violettes EpoxyGieharz, Anschlusse (SFH 4580 gebogen, SFH 4585 gerade) im 2.54-mm-Raster (1/10''),Kathodenkennzeichnung: siehe Mazeichnung. 5 mm LED package (T 1 3/4), violet-colored epoxy resin, solder tabs (SFH 4580 bent, SFH 4585 straight) lead spacing 2.54 mm (1/10''), cathode marking: see package outline. Semiconductor Group 2 1998-11-12 SFH 4580 SFH 4585 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand, freie Beinchenlange max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm Symbol Symbol Wert Value - 55 ... + 100 100 5 100 2.5 200 375 Einheit Unit C C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA Semiconductor Group 3 1998-11-12 SFH 4580 SFH 4585 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Irel Spectral bandwidth at 50 % of Irel IF = 100 m A Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktive Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Symbol Symbol peak Wert Value 880 Einheit Unit nm 80 nm 15 0.16 0.4 x 0.4 4.2 ... 4.8 0.6/0.5 Grad deg. mm2 mm mm s A LxB LxW H tr, tf Co 25 pF VF VF IR 1.50 ( 1.8) 3.00 ( 3.8) 0.01 ( 1) V V A e 25 mW TCI - 0.5 %/K IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV -2 mV/K Semiconductor Group 4 1998-11-12 SFH 4580 SFH 4585 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Symbol Wert Value 0.25 Einheit Unit nm/K TC Ie min 25 mW/sr Ie typ 225 mW/sr Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHF00300 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1998-11-12 SFH 4580 SFH 4585 Relative spectral emission Irel = f () 100 rel % 80 OHR00877 Ie = f (IF) Ie 100 mA Single pulse, tp = 20 s Radiant intensity 10 2 e e (100mA) 10 1 OHR00878 Max. permissible forward current IF = f (TA) 125 OHR00880 F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 0 10 0 10 1 10 2 10 3 mA 10 4 F 800 850 900 950 nm 1000 0 20 40 60 80 C 100 T Forward current IF = f (VF), single pulse, tp = 20 s 10 1 OHR00881 Permissible pulse handling capability IF = f (), TA = 25 C, duty cycle D = parameter 10 4 mA OHR00886 Forward current versus lead length between the package bottom and the PC-board IF = f (I), TA = 25 C 120 mA OHR00949 F A F 10 0 D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2 F 100 80 10 -1 60 0.5 10 2 DC 40 10 -2 D= 10 -3 tp T tp F 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp 0 0 5 10 15 20 25 mm 30 Semiconductor Group 6 1998-11-12 |
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